High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications

BACA, ALBERT G. ; BRIGGS, RONALD D. ; ALLERMAN, ANDREW A. ; MITCHELL, CHRISTINE C. ; FISCHER, ARTHUR J. ; ASHBY, CAROL I. ; WRIGHT, ALAN F. ; SHUL, RANDY J.

Sandia National Laboratories

关键词: Aluminium Nitrides;    Gallium Nitrides;    36 Materials Science;    Electronic Equipment;    42 Engineering;   

DOI  :  10.2172/789599
RP-ID  :  SAND2001-3645
RP-ID  :  AC04-94AL85000
RP-ID  :  789599

美国|英语

来源: UNT Digital Library

【 摘 要 】

No abstract prepared.