Electron effective mass and electronic structure in nonstoichiometric amorphous Indium Gallium Zinc Oxide films

JOURNAL OF ALLOYS AND COMPOUNDS

卷:813

Article

Zhu, Xin¹  Yang, Yang¹  Liu, Xin-Dian¹  Li, Zhi-Qing¹ 

[1] Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300354, Peoples R China

关键词: Electron effective mass;    Wide band gap semiconductor;    Drude model;   

DOI  :  10.1016/j.jallcom.2019.152183

来源: Elsevier

【 摘 要 】

The transport properties and optical transmittance and absorption spectra for the nostoichiometric amorphous indium gallium zinc oxide (a-IGZO) films with gallium and zinc deficiencies are investigated. The resistivity and carrier concentration variation with temperature both reveal that the films possess degenerate semiconductor (or metal) characteristics. The thermopower is negative and decreases linearly with decreasing temperature, indicating the electron diffusion thermopower governs the thermal transport process in each film. Using free-electron-like model, we extracted the electron effective mass, which is about three times as large as that of the stoichiometric one and increases with increasing carrier (electron) concentration. Neglecting the variation in the energy with the wavevector near the valence band maximum and using the free-electron-like model, we also obtained the electron effective mass via the optical absorption spectra measurement. The magnitude of the effective mass obtained via optical spectra measurement is comparable to that obtained via thermopower measurement for each film. Our results strongly suggest that the nostoichiometric a-IGZO films possess free-electron-like pseudo-energy-bandstructure. (C) 2019 Elsevier B.V. All rights reserved.

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