Determination of the electron effective mass for n-type germanium by the low-frequency impedance dispersion

Functional Materials and Nanotechnologies 2018

Malyshkina, O.^1 ; Barabanova, E.^1 ; Boitsova, K.^1 ; Klyuev, V.^1 ; Kaplunov, I.^1

Tver State University, Russia^1

关键词: Complex impedance analysis;    Crystallographic directions;    Effective mass;    Electron effective mass;    Impurity concentration;    Low-frequency impedance;    Polycrystalline;    Specific resistances;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/503/1/012015/pdf
DOI  :  10.1088/1757-899X/503/1/012015

来源: IOP

【 摘 要 】

We have proposed and approved a method for calculating the electron effective mass in a semiconductor based on the complex impedance analysis. The electron effective mass for Ge n-type (doped by Sb) with a specific resistance of 4 Ω-cm (crystallographic directions: [100], [110], [111] and polycrystalline) and 1.5, 7.5, 20 Ω-cm (crystallographic direction [111]) are measured. It is shown that the effective mass depends on the impurity concentration and the crystallographic direction.