Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate

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Article

Chen, H. C.¹  Chen, M. J.¹  Liu, T. C.¹  Yang, J. R.¹  Shiojiri, M.² 

[1] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

[2] Kyoto Inst Technol, Kyoto 6180091, Japan

关键词: Zinc oxide;    Stimulated emission;    Epilayer;    Atomic layer deposition;    Wide band gap semiconductor;    Threading dislocation;    X-ray diffraction;    Transmission electron microscopy;   

DOI  :  10.1016/j.tsf.2010.07.069

来源: Elsevier

【 摘 要 】

A high-quality ZnO epilayer was grown on the (0001) sapphire substrate by atomic layer deposition (ALD) and followed by high-temperature rapid thermal annealing (RTA). The layer-by-layer growth and low deposition temperature of ALD, as well as the RTA treatment, prevent the formation of columnar structures in the ZnO epilayer. A distorted ZnO layer at the ZnO/sapphire interface, which relaxes the misfit in ZnO leads to a low threading dislocation density in the ZnO epilayer. Optically-pumped stimulated emission was achieved with a low-threshold intensity of 153 kW/cm(2) at room temperature. The good crystalline quality and low-threshold stimulated emission indicate that the ALD approach is appropriate for preparing high-quality ZnO epilayers. (C) 2010 Elsevier B.V. All rights reserved.

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