The influence of the crystallographic structure of the intermetallic grains on tin whisker growth

JOURNAL OF ALLOYS AND COMPOUNDS

卷:785

Article

Illes, Balazs^1,4  Skwarek, Agata^2,4  Ratajczak, Jacek³  Dusek, Karel⁴  Busek, David⁴ 

[1] Budapest Univ Technol & Econ, Dept Elect Technol, Budapest, Hungary

[2] Inst Electr Mat Technol, Dept Microelect, Krakow, Poland

[3] Inst Electr Mat Technol, Dept Mat & Semicond Struct Res, Warsaw, Poland

[4] Czech Tech Univ, Dept Electrotechnol, Prague, Czech Republic

关键词: Tin whisker;    Intermetallic layer;    Crystallographic structure;    TEM;    Thin film;   

DOI  :  10.1016/j.jallcom.2019.01.247

来源: Elsevier

【 摘 要 】

In this paper, the relationship between the crystallographic structure of Cu-Sn intermetallic grains and Sn whisker growth was investigated. In order to prevent the influence of the elements in the alloy composition and the effect of the soldering process on the formation of the intermetallic layer, 99.99% pure Sn was vacuum evaporated onto Cu substrates. The Sn layer thickness was sub-micron region (similar to 400 nm in average) to reach considerable and rapid compressive stress on the tin layer originated by the intermetallic formation. The samples were stored at room temperature for 1 month. Different types of whiskers (nodule and filament) and the layer structure underneath were studied with a scanning ion microscopy and transmission electron microscopy. It was found that not only the thickness of the intermetallic layer and shape of the intermetallic grains affects the whisker growth but the crystallographic structure of the intermetallic grains as well. The susceptibility of the Sn layer to whisker development is higher in those regions where the intermetallic layer is composed of monocrystalline grains instead of those regions, where it is composed of polycrystalline grains. This effect can be explained by the higher compressive stress generated by the monocrystalline intermetallics compared to the polycrystalline ones. (C) 2019 Elsevier B.V. All rights reserved.

【 授权许可】

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