Transport properties of Si based nanocrystalline films investigated by c-AFM

JOURNAL OF ALLOYS AND COMPOUNDS

卷:725

Article

Fazio, Maria Antonietta¹  Perani, Martina¹  Brinkmann, Nils^2,3  Terheiden, Barbara²  Cavalcoli, Daniela¹ 

[1] Univ Bologna, Dept Phys & Astron, Viale C Berti Pichat 6-2, I-40127 Bologna, Italy

[2] Univ Konstanz, Dept Phys, Constance, Germany

[3] Beamreach Solar, 1530 McCarthy Blvd, Milpitas, CA 95035 USA

关键词: Silicon thin film;    Conductive AFM;    Photovoltaics;    PECVD;   

DOI  :  10.1016/j.jallcom.2017.07.151

来源: Elsevier

【 摘 要 】

SiOxNy is an innovative material that has recently attracted a lot of attention in different and new applications, ranging from photovoltaics, conductive oxide, carbon capture; nevertheless, due to its complex and multiphase nature, the understanding of its electrical properties is still ongoing. In this framework, the present manuscript presents the investigation of electrical transport properties of nanocrystalline (nc-) SiOxNy. In fact, non-stoichiometric nc-SiOxNy films deposited by Plasma Enhanced Chemical Vapor Deposition have been studied by conductive Atomic Force Microscopy (AFM). The analyses of samples subjected to different thermal treatments conditions and the comparison with nc-Si: H films have allowed us to clarify the role of crystallization and O content on the local conductivity of the layers. We show that the annealing treatment promotes an enhancement of conductance, a redistribution of the conductive grains in the layers and the activation of B doping. Current-voltage characteristics locally performed using the conductive AFM-tip as a nanoprobe have been modelled with thermionic emission transport mechanism. (C) 2017 Elsevier B.V. All rights reserved.

【 授权许可】

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