Multiple phases in sputtered Cr2CoGa films

JOURNAL OF ALLOYS AND COMPOUNDS

卷:598

Article

Geisler, Manuel P.¹  Meinert, Markus¹  Schmalhorst, Jan¹  Reiss, Guenter¹  Arenholz, Elke² 

[1] Univ Bielefeld, Ctr Spinelect Mat & Devices, Dept Phys, D-33501 Bielefeld, Germany

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

关键词: Heusler compound;    Half-metal;    Thin film;    Phase decomposition;   

DOI  :  10.1016/j.jallcom.2014.02.035

来源: Elsevier

【 摘 要 】

By magnetron co-sputtering, thin films of a nominal Cr2CoGa compound were deposited on MgO and MgAl2O4. To achieve crystallization in the inverse Heusler structure, different heat treatments were tested. Instead of the inverse Heusler structure, we observed phase separation and precipitate formation in dependence on the heat treatment. The main precipitate is Cr3Ga in A15 structure. The remainder forms Co-rich CoGa in the B2 structure and possibly Cr-rich CoCr in the r-phase. (C) 2014 Elsevier B. V. All rights reserved.

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