Anomalous Hall effect in perpendicularly magnetized Mn3-xGa thin films

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:333

Article

Glas, M.¹  Ebke, D.^1,2  Imort, I-M¹  Thomas, P.¹  Reiss, G.¹ 

[1] Univ Bielefeld, Bielefeld, Germany

[2] Max Planck Inst Chem Phys Solids, Dresden, Germany

关键词: Mn-Ga compound;    Perpendicular magnetic anisotropy;    MRAM;    Spintronic;    Heusler compound;    Thin film;   

DOI  :  10.1016/j.jmmm.2012.12.040

来源: Elsevier

【 摘 要 】

Mn3-xGa (x=0.1, 0.4, 0.7) thin films on MgO and SrTiO3 substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall effect was observed for the tetragonal distorted lattice in the crystallographic D0(22) phase. The Hall resistivity Q(xy) was measured in a temperature range from 20 to 330 K. The determined skew scattering and side jump coefficients are discussed with regard to the film composition and used substrate and compared to the crystallographic and magnetic properties. (C) 2012 Elsevier By. All rights reserved.

【 授权许可】

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