期刊论文详细信息
JOURNAL OF ALLOYS AND COMPOUNDS 卷:575
Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol-gel method
Article
Baqiah, H.1  Ibrahim, N. B.1  Abdi, M. H.1  Halim, S. A.2 
[1] Univ Kebangsaan Malaysia, Sch Appl Phys, Fac Sci & Technol, Bangi 43600, Selangor, Malaysia
[2] Univ Putra Malaysia, Supercond & Thin Film Lab, Dept Phys, Fac Sci, Upm Serdang 43400, Selangor, Malaysia
关键词: Sol-gel;    Indium oxide;    Transmittance;    Porosity;    Conducting mechanism;    Hopping conductivity models;   
DOI  :  10.1016/j.jallcom.2013.04.089
来源: Elsevier
PDF
【 摘 要 】

High transparent In2O3 and Cr-doped In2O3 (In2-xCrxO3) nanocrystalline thin films were prepared using a simple sol-gel method followed by a spin coating technique. The effect of Cr concentration on the structural, microstructure, electrical and optical properties of In2-xCrxO3 were systematically investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), UV-vis spectroscopy, field emission scanning electron microscopy (FESEM) and Hall effect technique. The films have good crystallization with preferred orientation to (222) direction. The lattice parameters, a, of In2O3 system increased at lowest dopants (x = 0.025) and decreased as the dopant was further increased. The optical transmittance of films increased up to 98% for x = 0.05 and decreased for further Cr concentrations. From AFM measurement the films nanocrystals morphology was depending on Cr concentrations. The band gap was around 3.76 eV for pure and with x <= 0.075 however it increased. The effect of Cr concentrations on conducting mechanisms of In2O3 film has been investigated from 80 to 300 K using thermal activated conduction band and hopping models. The films, at x = 0.0-0.075, have typical semiconductor behaviour. Three different conducting mechanisms have been estimated. All thermal activation energies and conduction hopping parameters have been determined and analysed in details. (C) 2013 Elsevier B. V. All rights reserved.

【 授权许可】

Free   

【 预 览 】
附件列表
Files Size Format View
10_1016_j_jallcom_2013_04_089.pdf 1008KB PDF download
  文献评价指标  
  下载次数:0次 浏览次数:0次