High-responsivity (In0.26Ga0.74)2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition

JOURNAL OF ALLOYS AND COMPOUNDS

卷:828

Article

Ul Muazzam, Usman¹  Raghavan, M. Srinidhi^1,2  Pratiyush, Anamika Singh¹  Muralidharan, R.¹  Raghavan, Srinivasan¹  Nath, Digbijoy N.¹  Shivashankar, S. A.¹ 

[1] Indian Inst Sci IISc, Ctr Nano Sci & Engn CeNSE, Bengaluru 560012, India

[2] BMS Coll Engn, Bengaluru 560019, India

关键词: InGaO;    MSM photodetector;    Microwave-assisted deposition;    Tauc's plot;   

DOI  :  10.1016/j.jallcom.2020.154337

来源: Elsevier

【 摘 要 】

We report on the demonstration of (InxGa1-x)(2)O-3 (InGaO)-based UV photodetectors realized using a low temperature (similar to 200 degrees C) microwave irradiation-assisted deposition technique. By irradiating a solution of the substituted acetylacetonate (acac) complex, namely In0.6Ga0.4(acac)(3), employed as the single-source precursor, InGaO film was deposited on sapphire substrate, and found to be poly(nano)crystalline, with root mean square (r.m.s). roughness of 8.9 nm. However, the indium content of the film (0.26 mol fraction) was considerably less than in the metal complex (0.6 mol fraction). The optical band gap of the film was found to be 4.5 eV from Tauc's plot, indicative of a low indium mole fraction. This was confirmed using X-ray photoelectron spectroscopy measurements, from which the indium mole fraction was found to be 0.26. Further, the nature of band gap was determined and defect analysis was carried out using, respectively, Tauc's plot and cathodoluminescence (CL) measurements. A planar, interdigitated metal-semiconductor-metal (MSM) photodetector fabricated with the InGaO film exhibited a high responsivity of 16.9 A/W at a bias of 20 V, corresponding to a band edge at similar to 276 nm, with a high photo-to-dark current ratio of similar to 10(5). (c) 2020 Elsevier B.V. All rights reserved.

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