Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Coatings

Shoou-Jinn Chang¹  Sheng-Po Chang¹  Yong-Zhe Lin²  Wei-Lun Huang² 

[1] Institute of Microelectronics & Department of Electrical Engineering, Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan;

关键词: InGaO;    resistive random-access memory;    RF sputter;    top electrode;   

DOI  :  10.3390/coatings10050504

来源: DOAJ

【 摘 要 】

In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of −0.60 V, average high resistance state (HRS) of 54,954.09 Ω, and the average low resistance state (LRS) of 64.97 Ω, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiO_x and AlO_x because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiO_x, the set voltage, and reset voltage, HRS and LRS become much more stable.

【 授权许可】

Unknown