Simulation studies of p-doped ZnO MSM Photodetector with Plasmonic Enhancement

International Conference on Advances in Materials and Manufacturing Applications 2016

Fathima, Nazia^1 ; Shetty, Arjun^2 ; Balakrishnan, Jyothi^1

Department of Electronic Science, Bangalore University, Bangalore, India^1

Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore, India^2

关键词: Comsol multiphysics;    Doping concentration;    Metal semiconductor metal photodetector;    MSM photodetector;    Output current;    Plasmonic enhancements;    Semiconductor layers;    Simulation studies;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/149/1/012170/pdf
DOI  :  10.1088/1757-899X/149/1/012170

来源: IOP

【 摘 要 】

This paper presents the simulation studies of Metal-Semiconductor-Metal (MSM) Photodetector (PD) with and without plasmonic enhancement. The simulations were carried out using COMSOL Multiphysics® software. The semiconductor layer was p-type ZnO with a doping concentration of 1016/cm3. The plasmonic layer was of Au nanoparticles. The PD was irradiated with 10W UV radiation of wavelength 280nm. The output currents of MSM PD with and without plasmonic layer were found to be ∼0.9 10-7A and ∼0.8 10-8A respectively. It was observed that there is an appreciable increase (factor of 10) in photo current in devices with a plasmonic layer. The effect of change in the size of Au nano particles on output photocurrent was also studied.