Optimization of thermoelectric properties achieved in Cu doped β-In2S3 bulks

JOURNAL OF ALLOYS AND COMPOUNDS

卷:782

Article

Chen, Yue-Xing¹  Li, Fu¹  Wang, Wenting¹  Zheng, Zhuanghao^1,2  Luo, Jingting¹  Fan, Ping¹  Takeuchi, Tsunehiro³ 

[1] Shenzhen Univ, Coll Phys & Energy, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China

[2] Univ Rennes 1, Lab Glasses & Ceram, Inst Chem Sci, UMR CNRS6226, F-35042 Rennes, France

[3] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

关键词: Thermoelectric;    Doping effect;    Thermal conductivity;    beta-In2S3;   

DOI  :  10.1016/j.jallcom.2018.12.138

来源: Elsevier

【 摘 要 】

beta-In2-xCuxS3 (0 <= x <= 0.40) bulks were prepared by solid-state reaction followed by pulsed current sintering. For x <= 0.20, X-ray diffraction indicated the formation of single phase, while the secondary phase, Cu2S, was observed for the samples prepared at x = 0.30 and x = 0.40. The Cu-doping allowed us to optimize the power factor in range of whole measured temperature by reducing the low temperature electrical resistivity. With the significant reduction in lattice thermal conductivity, a maximum ZT of 0.51 at 700 K and an average ZT of 0.31 from 300 to 700 K were obtained for the sample with x = 0.05, which values are 0.3 and 1.2 times higher than that of pristine sample. (C) 2018 Elsevier B.V. All rights reserved.

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