The diffusion of cesium, strontium, and europium in silicon carbide

JOURNAL OF NUCLEAR MATERIALS

卷:476

Article

Dwaraknath, S. S.¹  Was, G. S.¹ 

[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA

关键词: Diffusion;    SIMS;    Fission product;    SiC;    TRISO;    Cesium;    Strontium;    Europium;   

DOI  :  10.1016/j.jnucmat.2016.04.034

来源: Elsevier

【 摘 要 】

A novel multi-layer diffusion couple was used to isolate the diffusion of strontium, europium and cesium in SiC without introducing radiation damage to SiC and at concentrations below the solubility limit for the fission products in SiC. Diffusion occurred by both bulk and grain boundary pathways for all three fission products between 900 degrees C and 1, 300 degrees C. Cesium was the fastest diffuser below 1,100 degrees C and the slowest above this temperature. Strontium and europium diffusion tracked very closely as a function of temperature for both bulk and grain boundary diffusion. Migration energies ranged from 1.0 eV to 5.7 eV for bulk diffusion and between 2.2 eV and 4.7 eV for grain boundary diffusion. These constitute the first measurements of diffusion of cesium, europium, and strontium in silicon carbide, and the magnitude of the cesium diffusion coefficient supports the premise that high quality TRISO fuel should have minimal cesium release. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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