Radiation enhanced diffusion of cesium, strontium, and europium in silicon carbide

JOURNAL OF NUCLEAR MATERIALS

卷:474

Article

Dwaraknath, S. S.¹  Was, G. S.¹ 

[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, 2355 Bonisteel Blvd, Ann Arbor, MI 48109 USA

关键词: Diffusion;    SIMS;    Fission product;    SiC;    TRISO;    Radiation enhanced diffusion;    Cesium;    Strontium;    Europium;   

DOI  :  10.1016/j.jnucmat.2016.02.034

来源: Elsevier

【 摘 要 】

The radiation enhanced diffusion (RED) of three key fission products in SiC: cesium, europium, and strontium was investigated following ion irradiation at a damage rate of 4.6 x 10(-4) dpa s(-1) at temperatures between 900 degrees C and 1100 degrees C. The radiation enhancement of diffusion was as large as 10(7) at 900 degrees C, and dropped to a value of 1 by 1300 degrees C for all but cesium grain boundary diffusion. Strontium and cesium exhibited several orders of magnitude enhancement for both mechanisms. Europium enhancement was greatest at 900 degrees C, but dropped to the thermal rates at 1100 degrees C for both mechanisms. The trends in the RED mechanism correlated well with the point defect concentrations suggesting that both carbon and silicon vacancy concentrations are important for fission product diffusion. These constitute the first radiation-enhanced diffusion measurements of strontium, cesium and europium in SiC. Published by Elsevier B.V.

【 授权许可】

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