Structural modifications of boron carbide irradiated by swift heavy

JOURNAL OF NUCLEAR MATERIALS

卷:546

Article

Pipon, Y.^1,2  Victor, G.¹  Moncoffre, N.¹  Gutierrez, G.³  Miro, S.⁴  Douillard, T.⁵  Rapaud, O.⁶  Pradeilles, N.⁶  Sainsot, P.⁷  Toulhoat, N.^1,3  Toulemonde, M.⁸ 

[1] Univ Lyon, Univ Claude Bernard Lyon 1, CNRS, IN2P3,IP21 Lyon,UMR 5822, F-69622 Villeurbanne, France

[2] Univ Lyon, Univ Claude Bernard Lyon 1, IUT Lyon 1, Dept Chim, F-69622 Lyon, France

[3] Univ Paris Saclay, Den Serv Rech Met Phys SRMP, CEA, Lab JANNUS, F-91191 Gif Sur Yvette, France

[4] CEA Marcoule DEN DTCD SECM LMPA, F-30207 Bagnols Sur Ceze, France

[5] Univ Lyon, INSA Lyon, CNRS, MATEIS,UMR 5510, F-69621 Lyon, France

[6] Univ Limoges, CNRS, IRCER, UMR 7315, F-87000 Limoges, France

[7] Univ Lyon, INSA Lyon, CNRS, UMR5259,LaMCoS, F-69621 Lyon, France

[8] ENSICAEN, CNRS, CEA, CIMAP,GANIL, Caen, France

关键词: Structural modification;    Swift heavy ion irradiation;    Boron carbide;    Raman spectroscopy;    Electron microscopy;   

DOI  :  10.1016/j.jnucmat.2020.152737

来源: Elsevier

【 摘 要 】

Boron carbide (B4C) behavior under irradiation is widely studied in order to predict the lifetime of this material in future (Generation IV) nuclear fission reactors. This paper is focused on the effects of high electronic stopping powers (Se) on B4C structure modifications. Sintered B4C samples were irradiated at room temperature with swif(t) heavy ions (between 0.5 and 3 MeV.u(- 1)) corresponding to Se values in the 4.1 to 15.4 keV.nm(-1) range at the sample surface. In order to investigate the structural changes as a function of depth, transmission electron microscopy and Raman mapping were performed on the irradiated samples along the path of the incident ions. For the highest Se values, damage results in the creation of large hillocks at the sample surface along with the amorphization of the bulk. These results are explained, in the frame of the inelastic thermal spike model, by local melting in latent tracks that are created only when irradiations are performed above a Se threshold evaluated at around 9 keV nm(-1). (C) 2020 Elsevier B.V. All rights reserved.

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