Kinetics of the electronic center annealing in Al2O3 crystals

JOURNAL OF NUCLEAR MATERIALS

卷:502

Article

Kuzovkov, V. N.¹  Kotomin, E. A.^1,2  Popov, A. I.¹ 

[1] Inst Solid State Phys, Kengaraga 8, LV-1063 Riga, Latvia

[2] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

关键词: Al2O3;    Radiation defects;    F centers;    F-2 centers;    Diffusion;    Recombination;    Annealing kinetics;   

DOI  :  10.1016/j.jnucmat.2018.02.022

来源: Elsevier

【 摘 要 】

The experimental annealing kinetics of the primary electronic F, F+ centers and dimer F-2 centers observed in Al2O3 produced under neutron irradiation were carefully analyzed. The developed theory takes into account the interstitial ion diffusion and recombination with immobile F-type and F-2-centers, as well as mutual sequential transformation with temperature of three types of experimentally observed dimer centers which differ by net charges (0, +1, +2) with respect to the host crystalline sites. The relative initial concentrations of three types of F-2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies. (C) 2018 Elsevier B.V. All rights reserved.

【 授权许可】

Free