Kinetics of dimer F2 type center annealing in MgF2 crystals

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:435

Article; Proceedings Paper

Kuzovkov, V. N.¹  Kotomin, E. A.^1,2  Popov, A. I.¹ 

[1] Inst Solid State Phys, Kengaraga 8, LV-1063 Riga, Latvia

[2] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

关键词: MgF2;    Radiation defects;    F centers;    F-2 centers;    Diffusion;    Annealing kinetics;   

DOI  :  10.1016/j.nimb.2017.10.025

来源: Elsevier

【 摘 要 】

In this paper, we analyzed experimental annealing kinetics of the primary electronic F centers and dimer F-2 centers observed in MgF2 at higher radiation doses and temperatures. The developed phenomenological theory takes into account the interstitial ion diffusion and recombination with the F-2-centers, as well as mutual sequential transformation with temperature growth of three types of experimentally observed dimer centers: F-2(1), F-2(2), F-2(3) (which differ tentatively by charges (0, +1, +2) with respect to the host crystalline sites). The results of the electron, neutron and ion irradiation are compared. As the result, the relative initial concentrations of three types of F-2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

【 授权许可】

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