MeV electron irradiation of Si-SiO2 structures with magnetron sputtered oxide

19th International Summer School on Vacuum, Electron and Ion Technologies

Kaschieva, S.^1 ; Angelov, Ch.^2 ; Dmitriev, S.N.^3

Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia

1784, Bulgaria^1

Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, Sofia

1784, Bulgaria^2

Flerov Laboratory of Nuclear Reactions, Joint Institute of Nuclear Research, Moscow Region, Dubna

141980, Russia^3

关键词: Defect concentrations;    Electron irradiation dose;    Oxide thickness;    Radiation defects;    Si-SiO2 interfaces;    Thermally grown oxide;    Thermally stimulated current methods;    Trap concentration;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/700/1/012036/pdf
DOI  :  10.1088/1742-6596/700/1/012036

来源: IOP

【 摘 要 】

MeV electrons influence on the characteristics of Si-SiO2structure with magnetron sputtered oxide was studied by ellipsometry and the thermally stimulated current (TSC) method. The MOS structures used in this study were fabricated onoriented p-Si wafers of 12.75-17,25 Ω.cm resistivity. Magnetron sputtered oxides with different thicknesses of 20 and 100 nm were deposited on p-Si substrates. Both groups of samples were irradiated by 23 MeV electrons. The oxide thicknesses and TSC characteristics of the MOS samples were measured before and after MeV electron irradiation with doses of 4.8×1015and 4.8×1016el.cm-2. The oxide thicknesses of both groups of samples increased after irradiation. The main defects generated by the MeV electrons were evaluated. It was shown that the trap concentration increases with the electron irradiation dose. The main peak in the TSC characteristics gives information about the main radiation defects at the Si-SiO2interface of the MOS structures. These defects can be related to the vacancy-boron complexes which are associated with the main impurities in the p-Si substrate. These results correspond to our results reported earlier for MeV electron irradiated Si-SiO2structures with thermally grown oxide. But (in this case) the effects observed are more pronounced for the magnetron sputtered oxide. A possible reason is the higher defect concentration generated in the magnetron sputtered oxide during its deposition on Si-substrates.