Spin-transfer physics and the model of ferromagnetism in (Ga, Mn)As

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:320

Article

Ohno, Hideo^2,3  Dietl, Tomasz^1,3,4 

[1] Polish Acad Sci, Inst Phys, Lab Cryogen & Spintron Res, PL-02668 Warsaw, Poland

[2] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, ERATO, Semicond Spintron Project, Tokyo, Japan

[4] Warsaw Univ, Inst Theoret Phys, PL-00681 Warsaw, Poland

关键词: ferromagnetic semiconductor;    III-V compounds;    spin transfer;    metal-insulator transition;   

DOI  :  10.1016/j.jmmm.2007.12.016

来源: Elsevier

【 摘 要 】

We describe recent progress and open questions in the physics of current-induced domain-wall displacement and creep in (Ga, Mn) As. Furthermore, the reasons are recalled why, despite strong disorder and localization, the p-d Zener model is suitable for the description of this system. (c) 2007 Elsevier B. V. All rights reserved.

【 授权许可】

Free