Investigation of the abnormal Zn diffusion phenomenon in III-V compound semiconductors induced by the surface self-diffusion of matrix atoms

1st International Conference on New Material and Chemical Industry

材料科学;化学工业

Tang, Liangliang^1 ; Xu, Chang^1 ; Liu, Zhuming^2

College of Energy and Electricity, Hohai University, Nanjing

210098, China^1

Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing

100190, China^2

关键词: Diffusion model;    Diffusion phenomena;    Diffusion process;    Diffusion sources;    III-V compounds;    Matrix atoms;    Rich conditions;    Self-Diffusion;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/167/1/012011/pdf
DOI  :  10.1088/1757-899X/167/1/012011

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Zn diffusion in III-V compound semiconductorsare commonly processed under group V-atoms rich conditions because the vapor pressure of group V-atoms is relatively high. In this paper, we found that group V-atoms in the diffusion sources would not change the shaped of Zn profiles, while the Zn diffusion would change dramatically undergroup III-atoms rich conditions. The Zn diffusions were investigated in typical III-V semiconductors: GaAs, GaSb and InAs. We found that under group V-atoms rich or pure Zn conditions, the double-hump Zn profiles would be formed in all materials except InAs. While under group III-atoms rich conditions, single-hump Zn profiles would be formed in all materials. Detailed diffusion models were established to explain the Zn diffusion process; the surface self-diffusion of matrix atoms is the origin of the abnormal Zn diffusion phenomenon.