Scientific/Technical Report

SARACHIK, MYRIAM P

关键词: Thermoelectric power;    metal-insulator transition;    two dimensional electron systems;    quantum phase transition;    electron-electron interactions;    high-mobiility;    silicon metal-oxide-semiconductor-field-effect-trasistors (MOSFETs).;   

DOI  :  10.2172/1140147
RP-ID  :  DOE-CCNY/CUNY-ER46284
PID  :  OSTI ID: 1140147

学科分类：凝聚态物理

美国|英语

来源: SciTech Connect

【 摘 要 】

Measurements of the thermoelectric power of the dilute, strongly-interacting two-dimensional electron system in high-mobility, low-disorder silicon MOSFETs were obtained at low temperatures down to 0.2 K. With decreasing density n_s, the thermopower was found to exhibit a sharp increase by more than an order of magnitude, tending to a divergence at a finite, disorder-independent density n_t. The critical behavior of the thermopower observed in our experiments provides clear evidence for an interaction-induced quantum phase transition to a new phase at low density in a strongly interacting 2D electron system, thereby settling a 20-year debate.