Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS

卷:324

Article

Yamaguchi, Takehiro¹  Masubuchi, Satoru^1,2  Iguchi, Kazuyuki¹  Moriya, Rai¹  Machida, Tomoki^1,2,3 

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

关键词: Spin injection;    Graphene;    Tunnel barrier;    Atomic layer deposition;   

DOI  :  10.1016/j.jmmm.2011.09.031

来源: Elsevier

【 摘 要 】

We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of similar to 30 Omega has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

Free