Problems of the experimental implementation of MTJ

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Mazaletskiy, L.A.^1,2 ; Rudy, A.S.^1,2 ; Trushin, O.S.^1,2 ; Naumov, V.V.^2 ; Mironenko, A.A.^2 ; Vasilev, S.V.^2

Department of Microelectronics and General Physics, Yaroslavl State University, Sovetskaya Street 14, Yaroslavl

150000, Russia^1

Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, Universitetskaya Street 21, Yaroslavl

150007, Russia^2

关键词: Lateral sizes;    Magnetic tunneling junctions;    Main parameters;    MRAM technology;    Tunnel barrier;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012105/pdf
DOI  :  10.1088/1742-6596/643/1/012105

来源: IOP

【 摘 要 】

The results of experimental studies of MRAM technology based on standard magnetic tunneling junctions are presented. Basic steps of experimental fabrication of MRAM cell are considered. Experimental samples of MTJ with variable lateral sizes are fabricated. Current-voltage characteristics of the tunnel barriers are investigated. Main parameters of the tunnel barriers are estimated from comparison of the experimental data with the theory.