Room temperature spin injection in a light-emitting diode based on a GaMnSb/n-GaAs/InGaAs tunnel junction

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Dorokhin, M.V.^2 ; Ved, M.V.^1,2 ; Malysheva, E.I.^2 ; Demina, P.B.^2 ; Zdoroveyshchev, A.V.^2 ; Kudrin, A.V.^1,2 ; Danilov, Yu.A.^1,2

Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod

603950, Russia^1

Physical-Technical Research Institute of Nizhny Novgorod, Lobachevsky State University, Nizhny Novgorod

603950, Russia^2

关键词: Circularly polarized;    Ferromagnetic properties;    Polarization characteristics;    Polarization degree;    Spin injection;    Spin light emitting diode;    Temperature dependencies;    Temperature range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012035/pdf
DOI  :  10.1088/1742-6596/816/1/012035

来源: IOP

【 摘 要 】

The circularly polarized electroluminescence from an InGaAs/GaAs light-emitting diode with a (Ga,Mn)Sb/n+GaAs tunnel junction was investigated in the temperature range of 10-300 K. The obtained polarization degree is believed to be driven by the spin injection of electrons from the valence band of ferromagnetic (Ga,Mn)Sb into the conduction band of n+GaAs. The temperature dependencies of the polarization characteristics are determined by the ferromagnetic properties of the (Ga,Mn)Sb layer. The room temperature circularly polarized emission is prospective for the fabrication of a spin light-emitting diode with an injector based on a diluted magnetic semiconductor.