JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 卷:453 |
The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction | |
Article | |
Pan, Mengchun1  Li, Peisen1  Qiu, Weicheng1  Zhao, Jianqiang1  Peng, Junping1  Hu, Jiafei1  Hu, Jinghua1  Tian, Wugang1  Hu, Yueguo1  Chen, Dixiang1  Wu, Xuezhong1  Xu, Zhongjie2  Yuan, Xuefeng3  | |
[1] Natl Univ Def Technol, Coll Mechatron Engn & Automat, Changsha 410073, Hunan, Peoples R China | |
[2] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China | |
[3] Natl Supercomp Ctr Guangzhou, Guangzhou 510000, Guangdong, Peoples R China | |
关键词: Graphene; Magnetic tunneling junction; Spintronics device; Non-collinear; Anisotropy; | |
DOI : 10.1016/j.jmmm.2018.01.016 | |
来源: Elsevier | |
【 摘 要 】
Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device. (C) 2018 Elsevier B.V. All rights reserved.
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