Electronics Structure of Monochalcogenide Materials MX (M = Ge, Sn and Pb; X = S and Se) Buckled Square Lattice

International Conference on Condensed Matters and Advanced Materials 2018

Hendrawan, Juhri^1 ; Absor, Moh. Adhib Ulil^1 ; Arifin, Muhammad^1 ; Jihad, Ibnu^1 ; Abraha, Kamsul^1

Department of Physics, Universitas Gadjah Mada, Daerah Istimewa Yogyakarta

55281, Indonesia^1

关键词: Perturbation theory;    Rashba parameters;    Spin orientations;    Spin splittings;    Spintronics device;    Square lattices;    Symmetry groups;    Time reversal symmetries;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/515/1/012105/pdf
DOI  :  10.1088/1757-899X/515/1/012105

来源: IOP

【 摘 要 】

The electronics structure of monochalcogenide materials buckled square lattice is investigated by computation based on Density Functional Theory (DFT). The investigation shows that there is spin splitting on xy-plane at Γ point and M point as a Rashba effect. Perturbation theory k.p and symmetry group C2v used to calculate the originates of the spin splitting. The results show that there are strong Rashba splitting for materials with center atom Pb (with Rashba parameter 5∼ eVA). Spin orientation displayed by spin-texture and show that there is time reversal symmetry between upper band and lower band. This condition explains that monochalcogenide materials buckled square lattice as potential candidates for spintronics devices.