Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy

SCRIPTA MATERIALIA

卷:125

Article

Koyanagi, T.¹  Lance, M. J.¹  Katoh, Y.¹ 

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

关键词: Silicon carbide;    Irradiation defects;    Raman spectroscopy;   

DOI  :  10.1016/j.scriptamat.2016.08.004

来源: Elsevier

【 摘 要 】

Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380-1180 degrees C to 0.011-1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

【 授权许可】

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