Combining dynamic modelling codes with medium energy ion scattering measurements to characterise plasma doping

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:409

Article; Proceedings Paper

England, J.¹  Moeller, W.²  van den Berg, J. A.³  Rossall, A.³  Min, W. J.⁴  Kim, J.⁴ 

[1] Appl Mat Inc, Silicon Syst Grp, Varian Semicond Equipment, Santa Clara, CA 95054 USA

[2] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany

[3] Univ Huddersfield, Sch Comp & Engn, Int Inst Accelerator Applicat, Huddersfield HD1 3DH, W Yorkshire, England

[4] Korea Mat & Anal Corp, Daejon 305500, South Korea

关键词: Ion-implantation;    Ion beam modelling;    TRIDYN;    TRI3DYN;    Plasma doping;    PLAD;    FinFET;   

DOI  :  10.1016/j.nimb.2017.05.043

来源: Elsevier

【 摘 要 】

Plasma doping ion implantation (PLAD) is becoming increasingly important in the manufacture of advanced semiconductor device structures but a fundamental understanding of PLAD is complicated. A model of PLAD into planar substrates has been constructed using the one dimensional computer code TRIDYN to predict collision cascades and hence substrate compositional changes during implantation. Medium Energy Ion Scattering (MEIS) measurements of dopant profiles in PLAD processed samples were used to calibrate the input ion and neutral fluxes to the model. Rules could then be proposed for how post implant profiles should be modified by a cleaning step. This learning was applied to a three dimensional TRI3DYN based model for PLAD implants into FinFET like structures. Comparison of the model to dopant profile measurements made by time of flight (TOF)-MEIS revealed the angular distributions of neutral species and doping mechanisms acting in three dimensional structures. (C) 2017 Elsevier B.V. All rights reserved.

【 授权许可】

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