Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Nanoscale Research Letters

Zhi Chen¹  Ting Zhang¹  Shibin Li¹  Yaoyu Xuan¹  Bohan Liu¹  Zhijun Liu¹  Waseem Ahmad¹  Xiangxiao Ying¹ 

[1] School of Optoelectronic Information, University of Electronic Science and Technology of China;

关键词: Ion-implantation;    Hyperdoped silicon;    NIR photoresponse;   

DOI  :  10.1186/s11671-017-2287-2

来源: DOAJ

【 摘 要 】

Abstract Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n+/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 1014 ions/cm2 has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

【 授权许可】

Unknown