Effect of selective ion-implanted p-GaN on the junction temperature of GaN-based light emitting diodes

OPTICS COMMUNICATIONS

卷:282

Article

Cheng, Yun-Wei¹  Chen, Hung-Hsien¹  Ke, Min-Yung¹  Chen, Cheng-Pin¹  Huang, Jian Jang¹ 

[1] Natl Taiwan Univ, Dept Elect Engn, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

关键词: Ion-implantation;    Junction temperature;    Thermal dissipation;    Light emitting diode;   

DOI  :  10.1016/j.optcom.2008.11.026

来源: Elsevier

【 摘 要 】

A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the p-type GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the linearity of the luminescence-current curve of the device is improved without altering electrical properties. (C) 2008 Elsevier B.V. All rights reserved.

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