Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:416

Article

Erich, M.¹  Kokkoris, M.²  Fazinic, S.³  Petrovic, S.³ 

[1] Univ Belgrade, Vinca Inst Nucl Sci, Lab Phys, POB 552, Belgrade, Serbia

[2] Natl Tech Univ Athens, Dept Phys, Zografou Campus, Athens 15780, Greece

[3] Inst Ruder Boskovic, Dept Expt Phys, Lab Ion Beam Interact, Bijenickca Cesta 54, Zagreb 10000, Croatia

关键词: RBS;    EBS;    Channeling;    Quantified amorphization;    Depth profile;   

DOI  :  10.1016/j.nimb.2017.12.001

来源: Elsevier

【 摘 要 】

This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the < 1 0 0 > oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering (12)c(p,p(0))C-12 at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the < 1 0 0 > diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

【 授权许可】

Free