Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:487

Article; Proceedings Paper

Gibaru, Q.^1,2,3  Inguimbert, C.¹  Caron, P.¹  Raine, M.²  Lambert, D.²  Puech, J.³ 

[1] ONERA DPHY, 2 Ave E Belin, F-31055 Toulouse, France

[2] CEA, DAM, DIF, F-91297 Arpajon, France

[3] CNES, 18 Av E Belin, F-31401 Toulouse, France

关键词: Geant4;    Secondary electron emission;    Monte Carlo;    Microdosimetry;    Electron;    Proton;    Heavy ion;   

DOI  :  10.1016/j.nimb.2020.11.016

来源: Elsevier

【 摘 要 】

Several improvements are added to the MicroElec extension of Geant4 in order to track very low energy electrons, protons and ions in different materials. The interaction processes for ions and protons are extended down to 1 keV/nucleon, and to a few eVs for electrons, corresponding to the electron affinity or work-function of the selected material. Surface interaction processes for electrons are added, along with electron-phonon interactions for SiO2. The models are validated for silicon and several new materials (C, Al, Ti, Ni, Cu, Ge, Ag, W, SiO (2) and Kapton), which significantly broadens the capabilities of MicroElec. Developed for microdosimetry simulation, the module can now also be used for secondary electron emission applications.

【 授权许可】

Free