Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1-and 2-carrier Hecht equations

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:399

Article

Auden, E. C.¹  Vizkelethy, G.¹  Serkland, D. K.¹  Bossert, D. J.¹  Doyle, B. L.¹ 

[1] Sandia Natl Labs, POB 5800 MS 0665, Albuquerque, NM 87185 USA

关键词: Charge collection efficiency;    Gallium arsenide;    Ion radiation effects;    Ion accelerators;    Photodiodes;   

DOI  :  10.1016/j.nimb.2017.03.045

来源: Elsevier

【 摘 要 】

The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photo diodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al0.3Ga0.7As/GaAs/Al0.25Ga0.75As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region. (C) 2017 Elsevier B.V. All rights reserved.

【 授权许可】

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