Degradation of the charge collection efficiency of an n-type Fz silicon diode subjected to MeV proton irradiation

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:348

Article; Proceedings Paper

Barbero, Nicolo^1,2  Forneris, Jacopo^1,2  Grilj, Veljko³  Jaksic, Milko³  Raisanen, Jyrki⁴  Simon, Aliz^5,6  Skukan, Natko³  Vittone, Ettore^1,2 

[1] Univ Torino, NIS Res Ctr, Dept Phys, I-10250 Turin, Italy

[2] Univ Torino, CNISM, I-10250 Turin, Italy

[3] Rudjer Boskovic Inst, Dept Expt Phys, Zagreb 10002, Croatia

[4] Univ Helsinki, Dept Phys, Helsinki 00014, Finland

[5] IAEA, Vienna Int Ctr, A-1400 Vienna, Austria

[6] Hungarian Acad Sci ATOMKI, Inst Nucl Res, Debrecen, Hungary

关键词: Charge collection efficiency;    Silicon;    Radiation damage;    IBIC;   

DOI  :  10.1016/j.nimb.2014.11.019

来源: Elsevier

【 摘 要 】

We present the analysis of the charge collection efficiency (CCE) degradation of float zone grown n-type silicon detectors irradiated with 1.3, 2.0 and 3.0 MeV protons. The analysis Was carried out by irradiating small regions (50 x 50 mu m(2)) with a proton microbeam at fluences ranging from 10(11) to 4.10(12) ions/cm(2) and probing the effect of irradiation by measuring the 4.5 MeV Li ion induced charge in full depletion conditions. The CCE degradation as function of the proton fluence shows an unexpected deviation from the linear behavior predicted by the Shockley Read Hall model of carrier recombination. The build-up of excess hydrogen related donors due to proton irradiations is suggested to be the cause of a significant perturbation of the electrostatic properties of the diode, which drastically change the electron trajectories and hence the induced charge mechanism. (C) 2014 Elsevier B.V. All rights reserved.

【 授权许可】

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