Charge collection efficiency mapping of interdigitated 4H-SiC detectors

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:267

Article; Proceedings Paper

Vittone, E.^1,2  Skukan, N.³  Pastuovic, Z.³  Olivero, P.^1,2,3  Jaksic, M.³ 

[1] Univ Turin, Expt Phys Dept, NIS Excellence Ctr, I-10125 Turin, Italy

[2] Ist Nazl Fis Nucl, Sez Torino, I-10125 Turin, Italy

[3] Rudjer Boskovic Inst, Dept Expt Phys, Zagreb 10002, Croatia

关键词: IBIC;    Silicon carbide detector;    Charge collection efficiency;   

DOI  :  10.1016/j.nimb.2009.03.054

来源: Elsevier

【 摘 要 】

The Ion Beam Induced Charge (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two-dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent agreement between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free