RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:489

Article

Xia, B.^1,2  Ganem, J. J.^1,2  Steydli, S.^1,2  Tancrez, H.^1,2  Vickridge, I^1,2 

[1] Inst NanoSci Paris INSP, SAFIR, UMR7588, CNRS, Paris, France

[2] Sorbonne Univ, Paris, France

关键词: Atomic layer deposition (ALD);    Thin films;    Multilayer;    RBS;   

DOI  :  10.1016/j.nimb.2020.12.015

来源: Elsevier

【 摘 要 】

We present the design and operation of a specialized Atomic Layer Deposition (ALD) system, dedicated to stable isotopic tracing experiments of oxide film growth, using isotopically labelled water as the oxide reactant. A small chamber volume allows operation with only very small quantities of water vapor, minimising the consumption of the isotopically labelled water. The first results for growth of ZnO and TiO2 using Diethlyzinc (DEZ) and Tetrakis (dimethylamino)titanium (TDMAT) as the zinc and titanium precursors, and unlabelled water as reactant, are presented, to establish the growth conditions for stoichiometric ZnO and TiO2 on silicon. Absolute film compositions and thickness are determined by RBS and NRA as a function of vapor pulse duration, number of ALD cycles and substrate temperature. Physical thickness is determined by ellipsometry. The first results obtained for growth of ZnO using water highly enriched in O-18 are also presented.

【 授权许可】

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