Preparation of Al�?�Sb semiconductor by swift heavy ion irradiation

Bulletin of materials science

D K Avasthi¹  R K Mangal²  Y K Vijay²  M Singh² 

[1] Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India$$Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, IndiaNuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India$$;Department of Physics, University of Rajasthan, Jaipur 302 004, India$$Department of Physics, University of Rajasthan, Jaipur 302 004, IndiaDepartment of Physics, University of Rajasthan, Jaipur 302 004, India$$

关键词: Thin films;    Alâ€�?�Sb;    ion irradiation;    absorption;    RBS;    optical band gap.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Alâ€�?�Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10^-5 torr. These films were irradiated by Ag¹²⁺ heavy ions of energy, 160 MeV, with a fluence of 2.2 Ã�? 10¹³ ions/cm², to get aluminum antimonide semiconductor. Rutherford back scattering and optical band gap data confirmed mixing of bilayer to form the semi-conducting system.

【 授权许可】

Unknown