Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:493

Article

Zhang, Limin^1,2  Pan, Chenglong^1,2  Jiang, Weilin³  Wang, Lei^1,2  Meng, Xuan^1,2  Chen, Liang^1,2 

[1] Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou, Gansu, Peoples R China

[2] Lanzhou Univ, Engn Res Ctr Neutron Applicat Technol, Minist Educ, Lanzhou, Gansu, Peoples R China

[3] Pacific Northwest Natl Lab, Energy & Environm Directorate, Richland, WA 99352 USA

关键词: H implantation;    Nanocrystalline ceramics;    Silicon carbide;   

DOI  :  10.1016/j.nimb.2021.02.005

来源: Elsevier

【 摘 要 】

Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H-2(+) ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects of the implanted H atoms that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.

【 授权许可】

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