Damage formation and recovery in Fe implanted 6H-SiC

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:286

Article; Proceedings Paper

Miranda, P.¹  Wahl, U.^1,2  Catarino, N.¹  Lorenz, K.^1,2  Correia, J. G.^1,2  Alves, E.^1,2 

[1] Inst Tecnol & Nucl, P-2696953 Sacavem, Portugal

[2] Univ Lisbon, Ctr Fis Nucl, P-1649003 Lisbon, Portugal

关键词: 6H-SiC;    Ion implantation;    Damage annealing;    Lattice sites;    Emission channeling;   

DOI  :  10.1016/j.nimb.2011.10.072

来源: Elsevier

【 摘 要 】

Silicon carbide doped with magnetic ions such as Fe, Mn, Ni or Co could make this wide band gap semiconductor part of the diluted magnetic semiconductor family. In this study, we report the implantation of 6H-SiC single crystals with magnetic Fe-56(+) ions with an energy of 150 key. The samples were implanted with 5 x 10(14) Fe+/cm(2) and 1 x 10(16) Fe+/cm(2) at different temperatures to study the damage formation and lattice site location. The samples were subsequently annealed up to 1500 degrees C in vacuum in order to remove the implantation damage. The effect of the annealing was followed by Rutherford Backscattering/Channeling (RBS/C) measurements. The results show that samples implanted above the critical amorphization temperature reveal a high fraction of Fe incorporated into regular sites along the < 0001 > axis. After the annealing at 1000 degrees C, a maximum fraction of 75%, corresponding to a total of 3.8 x 10(14) Fe'/cm2, was measured in regular sites along the < 0001 > axis. A comparison is made between the observed annealing behavior and the one measured in low fluence (2 x 10(13) cm(-2)) beta emission channeling experiments using the radioactive isotope Fe-59 (t(1/2) = 45 d), where the sample was implanted at room temperature and the beta(-) emission channeling yield was measured by means of a position-sensitive detector. (C) 2011 Elsevier B.V. All rights reserved.

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