Effect of impurities on the Raman scattering of 6H-SiC crystals

Materials Research

Shenghuang Lin²  Zhiming Chen²  Lianbi Li¹  Chen Yang² 

[1] ,Xi'an University of Technology Department of Electronic Engineering Xi'an,PR, China

关键词: Raman scattering;    6H-SiC;    impurity;   

DOI  :  10.1590/S1516-14392012005000108

来源: SciELO

【 摘 要 】

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.

【 授权许可】

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