Atomistic modeling of ion implantation technologies in silicon

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:352

Article

Marques, Luis A.¹  Santos, Ivan¹  Pelaz, Lourdes¹  Lopez, Pedro¹  Aboy, Maria¹ 

[1] Univ Valladolid, Dept Elect, ETSI Telecomunicac, E-47011 Valladolid, Spain

关键词: Si;    Implantation;    Annealing;    Atomistic simulation;    Multi-scale schemes;   

DOI  :  10.1016/j.nimb.2014.11.105

来源: Elsevier

【 摘 要 】

Requirements for the manufacturing of electronic devices at the nanometric scale are becoming more and more demanding on each new technology node, driving the need for the fabrication of ultra-shallow junctions and finFET structures. Main implantation strategies, cluster and cold implants, are aimed to reduce the amount of end-of-range defects through substrate amorphization. During finFET doping the device body gets amorphized, and its regrowth is more problematic than in the case of conventional planar devices. Consequently, there is a renewed interest on the modeling of amorphization and recrystallization in the front-end processing of Si. We present multi-scale simulation schemes to model amorphization and recrystallization in Si from an atomistic perspective. Models are able to correctly predict damage formation, accumulation and regrowth, both in the ballistic and thermal-spike regimes, in very good agreement with conventional molecular dynamics techniques but at a much lower computational cost. (C) 2014 Elsevier B.V. All rights reserved.

【 授权许可】

Free