On the anomalous generation of {001} loops during laser annealing of ion-implanted silicon

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:458

Article; Proceedings Paper

Marques, Luis A.¹  Aboy, Maria¹  Santos, Ivan¹  Lopez, Pedro¹  Cristiano, Fuccio²  La Magna, Antonino³  Huet, Karim⁴  Tabata, Toshiyuki⁴  Pelaz, Lourdes¹ 

[1] Univ Valladolid, Dept Elect & Elect, ETSI Telecomunicac, E-47011 Valladolid, Spain

[2] Univ Toulouse, CNRS, LAAS, 7 Ave Du Col Roche, F-31031 Toulouse, France

[3] CNR, IMM, VIII Str 5, I-95121 Catania, Italy

[4] SCREEN Semicond Solut Co Ltd, LASSE, 14-30 Rue Alexandre, F-92230 Gennevilliers, France

关键词: Si;    Annealing;    Atomistic simulation;    Molecular dynamics;    Extended defects;   

DOI  :  10.1016/j.nimb.2018.09.030

来源: Elsevier

【 摘 要 】

We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {0 0 1} loops in nanosecond laser-annealed silicon. We demonstrate that at temperatures close to the melting point, self-interstitial rich silicon is driven into dense liquid-like droplets that are highly mobile within the solid crystalline matrix. These liquid droplets grow by a coalescence mechanism and eventually transform into {0 0 1} loops through a liquid-to-solid phase transition in the nanosecond timescale.

【 授权许可】

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