Effect of B4C diffusion barriers on the thermal stability of Sc/Si periodic multilayers

SURFACE SCIENCE

卷:604

Article

Jonnard, Philippe^1,2  Maury, Helene^1,2  Le Guen, Karine^1,2  Andre, Jean-Michel^1,2  Mahne, Nicola³  Giglia, Angelo³  Nannarone, Stefano^3,4  Bridou, Francoise⁵ 

[1] Univ Paris 06, UPMC, Lab Chim Phys Mat & Rayonnement, F-75231 Paris 05, France

[2] CNRS, UMR 7614, F-75231 Paris 05, France

[3] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[4] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

[5] Univ Paris 11, CNRS, Lab Charles Fabry, Inst Opt, F-91127 Palaiseau, France

关键词: Multilayer;    X-ray reflectivity;    X-ray scattering;    Diffusion barrier;    Annealing;    Sc;    Si;    B4C;   

DOI  :  10.1016/j.susc.2010.03.012

来源: Elsevier

【 摘 要 】

The optical properties of Sc/Si periodic multilayers are analyzed at three wavelengths in the X-ray range: 0.154, 0.712 and 12.7 nm. Fitting the reflectivity curves obtained at these three wavelengths enable us to constrain the parameters, thickness, density and roughness of the various layers, of the studied multilayers. Scattering curves were also measured at 12.7 nm on some samples to obtain an estimate of the correlation length of the roughness. Two sets of multilayers are used, with and without B4C diffusion barrier at the interfaces. To see the efficiency of the B4C layers the measures are performed after annealing up to 400 degrees C. A dramatic change of the structure of the Sc/Si multilayer is observed between 100 and 200 degrees C leading to a strong loss of reflectivity. For the Sc/B4C/Si/B4C multilayer the structure is stable up to 200 degrees C after which a progressive evolution of the stack occurs. (C) 2010 Elsevier B.V. All rights reserved.

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