Investigation of current injection in β-FeSi2/Si double-hetero structures light-emitting diodes by molecular beam epitaxy

THIN SOLID FILMS

卷:515

Article; Proceedings Paper

Ugajin, Y. ; Sunohara, T. ; Suemasu, T.

关键词: beta-FeSi2;    double heterostructures;    luminescence;    p-n junction;   

DOI  :  10.1016/j.tsf.2007.02.059

来源: Elsevier

【 摘 要 】

The p-Si/p-beta-FeSi2/P-Si/n-Si light-emitting diode (LED) was fabricated by molecular beam epitaxy (MBE) on Si(l 11) substrates. Compared to our previous p-Si/p-beta-FeSi2/n-Si double heterostructures (DH) LED, the turn-on voltage in the current-voltage (I-V) characteristics increased by approximately 0.2 V, meaning that defect densities at around the p-n junction were reduced. However, Si-related EL (1.05 eV) became dominant unexpectedly, and thus EL of beta-FeSi2 was suppressed accordingly. The origin of the luminescence is considered to be transitions via defect levels (1.05 eV) being due probably to Fe-B complex. (c) 2007 Elsevier B.V. All rights reserved.

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