Influences of deposition and crystallization kinetics on the properties of silicon films deposited by low-pressure chemical vapour deposition from silane and disilane

THIN SOLID FILMS

卷:518

Article

Temple-Boyer, Pierre¹ 

[1] CNRS, LAAS, F-31077 Toulouse, France

关键词: Low-pressure chemical vapour deposition;    Thin films;    Silicon;    Crystallization;    Refractive index;    Residual stress;   

DOI  :  10.1016/j.tsf.2010.07.037

来源: Elsevier

【 摘 要 】

The paper deals with the properties of silicon films obtained by low-pressure chemical vapour deposition (LPCVD). Two gaseous sources characterized by different deposition temperatures, i.e. disilane S12H6 (420-520 degrees C) and silane SiH4 (520-750 degrees C), was studied in order to understand the influences of deposition and crystallization kinetics on silicon film properties. Thus, the deposition of amorphous, semi-crystallized and polycrystalline silicon films was related to volume random and surface columnar crystallization phenomena, highlighting a linear relationship between the refractive index and the polysilicon volume fraction and, showing complex residual stress dependency with process conditions. Finally, by introducing the ratio V-d/V-c between the deposition and crystallization rates as a major parameter, different deposition behaviours and related semi-empirical relationships were defined in order to characterize fully the various properties of LPCVD silicon films (microstructure, polysilicon volume fraction, refractive index and residual stress) according to the chosen gaseous source, silane or disilane. (C) 2010 Elsevier B.V. All rights reserved.

【 授权许可】

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