Structural studies of epitaxial BaTiO3 thin film on silicon

THIN SOLID FILMS

卷:693

Article; Proceedings Paper

Wague, B.¹  Brubach, J. -B.²  Niu, G.^3,4  Dong, G.^3,4  Dai, L.^3,4  Roy, P.²  Saint-Girons, G.¹  Rojo-Romeo, P.¹  Robach, Y.¹  Vilquin, B.¹ 

[1] Univ Lyon, Ecole Cent Lyon, Inst Nanotechnol Lyon, CNRS UMR5270, 36 Ave Guy Collongue, F-69134 Ecully, France

[2] Synchrotron SOLEIL, AILES Beamline, F-91190 St Aubin, France

[3] Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Shaanxi, Peoples R China

[4] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Shaanxi, Peoples R China

关键词: Ferroelectricity;    Thin films;    Silicon;    Epitaxy;    Radio-frequency magnetron sputtering;    Infrared spectroscopy;    Phonon;   

DOI  :  10.1016/j.tsf.2019.137636

来源: Elsevier

【 摘 要 】

BaTiO3 thin films (60 nm-thick) grown on SrTiO3/Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO3 are absent in the films due to the clamping effect from the Si substrate.

【 授权许可】

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