Cu(In,Ga)Se2 absorbers from stacked nanoparticle precursor layers

THIN SOLID FILMS

卷:535

Article; Proceedings Paper

Uhl, A. R.¹  Koller, M.¹  Wallerand, A. S.¹  Fella, C. M.¹  Kranz, L.¹  Hagendorfer, H.¹  Romanyuk, Y. E.¹  Tiwari, A. N.¹  Yoon, S.²  Weidenkaff, A.²  Friedlmeier, T. M.³  Ahlswede, E.³  VanGenechten, D.⁴  Stassin, F.⁴ 

[1] Swiss Fed Labs Mat Sci & Technol, Empa, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland

[2] Swiss Fed Labs Mat Sci & Technol, Empa, Lab Solid State Chem & Catalysis, CH-8600 Dubendorf, Switzerland

[3] Zentrum Sonnenenergie & Wasserstoff Forsch ZSW, D-70565 Stuttgart, Germany

[4] Umicore SA, B-2250 Olen, Belgium

关键词: Non-vacuum deposition;    Nanoparticle dispersion;    CIGS;    Chalcopyrite;    Thin film solar cell;   

DOI  :  10.1016/j.tsf.2012.12.096

来源: Elsevier

【 摘 要 】

The following paper presents a processing route for Cu(In,Ga)Se-2 absorber layers that is based on nanoparticle dispersions which are applied by doctor blade deposition and converted with elemental selenium vapors. In particular, the preparation of the precursor layers is investigated by systematically assessing the influence of the stacking sequence of mono-and multi-metallic layers on sintering, elemental distribution and solar cell efficiency. By applying suitable stacking sequences, precursor layers with both local Cu-rich and over-all Cu-poor stoichiometry could be prepared that allowed improved sintering properties and modifications of the gallium gradient. Despite the still prevailing porosity of the absorber layer, solar cells with efficiencies exceeding 5% could be obtained. (C) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

Free