Solution processing of CuIn(S,Se)2 and Cu(In,Ga)(S,Se)2 thin film solar cells using metal chalcogenide precursors

THIN SOLID FILMS

卷:633

Article; Proceedings Paper

Arnou, Panagiota¹  Cooper, Carl S.²  Ulicna, Sona¹  Abbas, Ali¹  Eeles, Alex¹  Wright, Lewis D.¹  Malkov, Andrei V.²  Walls, John M.¹  Bowers, Jake W.¹ 

[1] Loughborough Univ, Wolfson Sch Mech Elect & Mfg Engn, CREST, Loughborough LE11 3TU, Leics, England

[2] Loughborough Univ, Dept Chem, Loughborough LE11 3TU, Leics, England

关键词: Chalcopyrite;    CIGS;    Gallium content;    Thin-film solar cells;    Spray-coating;    Solution processing;   

DOI  :  10.1016/j.tsf.2016.10.011

来源: Elsevier

【 摘 要 】

In order to realize the true low cost potential of Cu(In,Ga)(S,Se)(2) (CIGS) thin film solar cells, high performance needs to be combined with simple and easily controllable atmospheric-based deposition processes. A molecular solution-based approach for CIGS deposition is proposed, using metal chalcogenide precursors dissolved in an amine-thiol solvent combination. CIGS thin films were sprayed with varying Ga content and the sprayed films were incorporated into solar cells. The effect of the Ga content on the material and device properties is investigated. A champion power conversion efficiency of 9.8% (active area) was achieved, which highlights the potential of this methodology. (C) 2016 The Authors. Published by Elsevier B.V.

【 授权许可】

Free