Improved CuGaSe2 absorber properties through a modified co-evaporation process

THIN SOLID FILMS

卷:709

Article

Tsoulka, Polyxeni¹  Rivalland, Adrien¹  Arzel, Ludovic¹  Barreau, Nicolas¹ 

[1] Univ Nantes, UMR 6502, CNRS, Inst Mat Jean Rouxel IMN, 2 Rue Houssiniere BP 32229, F-44322 Nantes 3, France

关键词: Copper gallium di-selenide;    Co-evaporation process;    Thin films;    Wide band gap;    Copper ratio;    Physical vapor deposition;   

DOI  :  10.1016/j.tsf.2020.138224

来源: Elsevier

【 摘 要 】

The present study deals with CuGaSe2-thin-films for solar cell applications. With the aim of achieving chemically and structurally homogeneous CuGaSe2 layers, it is proposed a modified co-evaporation process, which implies two so-called relaxation sequences during films growth. The resulting layers are characterized by scanning electron microscopy and Raman spectroscopy. By comparing their characteristics with those of CuGaSe2 grown without relaxation sequence, it is demonstrated that the modified process yields improved distribution of elements throughout the whole layer. The performance of the resulting solar cells is improved exclusively through increased quantum efficiency in the large wavelengths; further output voltage increase would require alternative junction partners.

【 授权许可】

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